Application: Indium phosphide is the second generation semiconductor material, widely used in optical communication, integrated circuit and other fields. The technological innovation in the 5G era has brought about the vigorous development of the second generation semiconductor materials represented by Indium phosphide (InP) and GaAs. Indium phosphide (InP) is a III~V compound with Sphalerite type crystal structure and Lattice constant of 5.87 × 10-10 m, with a bandgap width of 1.34 eV, and a migration rate of 3000-4500 cm2/(V.S) at room temperature. InP crystal has many advantages, such as high Drift velocity of saturated electrons, strong radiation resistance, good thermal conductivity, high Solar-cell efficiency, etc. It is widely used in optical communication, high-frequency millimeter wave devices, photoelectric integrated circuits, outer space solar cells and other fields. In the future, the demand for components will link applications in 5G communication, automotive electronics and Optical communication fields with high-speed, high-frequency and high-power characteristics. The second and third generation compound semiconductors are expected to break through the Moore's law of silicon semiconductors.