Product Usage: Indium bismuth tin polycrystalline ingots have precise composition control, good uniformity, low impurity content, and high density, and are expected to be used as a new sputtering target material for phase change storage thin film materials. Compared to phase change storage targets prepared by powder metallurgy hot pressing vacuum method, the melting and casting process is simple, efficient, and low in production cost. The prepared indium bismuth tin polycrystalline ingots have controllable size, bright surface, and uniform composition. After slicing and polishing, multiple In Bi Sn targets can be obtained in batches.